2SK3547 - Silicon n-channel MOSFET

Panasonic

Datasheet Details

s.
High-speed switching.
Wide frequency band.
Gate-protection diode built-in 0.33+0.05.
0.02 3 0.10+0.05.
0.02 (0.40) (0.40) 0.80±0.05 1.20±0.05 5˚.
Absolute Maximum Ratings Ta = 25°C Parameter Drain-source voltage Gate-source voltage (Drain open) Drain current Peak drain current Power dissipation Channel temperature Storage temperature Symbol VDS VGSO ID IDP PD Tch Tstg Rating 50 ±7 100 200 100 125.
55 to +125 Unit V V mA mA mW °C °C.

📁 2SK3547 Similar Datasheet

2SK3541 - N-Channel MOSFET (Rohm)
2SK3541M3T5 - MOSFET (WILLAS)
2SK3541PT - N-Channel Enhancement Mode Field Effect Transistor (Chenmko Enterprise)
2SK3541SPT - N-Channel Enhancement Mode Field Effect Transistor (Chenmko Enterprise)
2SK3541Y3 - ESD protected N-Channel Enhancement Mode MOSFET (Cystech Electonics)
2SK3543 - N-Channel MOSFET (Toshiba)
2SK3544 - Silicon N-Channel MOS Type FET (Toshiba Semiconductor)
2SK3549-01 - N-CHANNEL SILICON POWER MOSFET (Fuji Electric)

Other Datasheets by Panasonic

Published: May 24, 2005 |