2SK3541 - N-Channel MOSFET

Datasheet Details

1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (2.5V) makes this device ideal for portable equipment. 4) Easily designed drive circuits. 5) Easy to parallel. ROHM : VMT3 0.2 1.2 0.8 (2) (3) (1) 0.2 1.2 0.32 0.4 0.4 0.13 0~0.1 0.5 0.15Max. 0.22 0.8 (1) Gate (2) Source (3) Drain Abbreviated symbol : KN !Structure Silicon N-channel MOSFET !Absolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Continuous Drain current Reverse drain cu.

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Published: Mar 30, 2005 |