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Transistors
2SB1678
Silicon PNP epitaxial planer type
Unit: mm
For low-frequency amplification I Features
• Low collector to emitter saturation voltage VCE(sat) • Large Peak collector current ICP • Mini power type package, allowing downsizing and thinning of the equipment and automatic insertion through the tape packing
4.5±0.1 1.6±0.2 1.5±0.1
4.0+0.25 –0.20
2.5±0.1 3˚
0.4±0.04
0.4±0.08 1.5±0.1 3˚
1.0+0.1 –0.2
3
1 2 0.5±0.08
2.6±0.1
I Absolute Maximum Ratings Ta = 25°C
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
*
45˚
Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
Rating −30 −20 −7 −5 −3 1 150 −55 to +150
Unit
3.0±0.
2SB1678 Datasheet
