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Transistors
2SB1679
Silicon PNP epitaxial planer type
Unit: mm
(0.425)
For low-frequency amplification I Features
• Large current capacitance • Low collector to emitter saturation voltage • Small type package, allowing downsizing and thinning of the equipment.
0.3+0.1 –0.0 3
0.15+0.10 –0.05
1.25±0.10
2.1±0.1 5°
1
2
0.2±0.1
(0.65) (0.65) 1.3±0.1 2.0±0.2
I Absolute Maximum Ratings Ta = 25°C
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Rating −15 −10 −7 − 0.5 −1 150 150 −55 to +150 Unit V V V A A mW °C °C
10°
0.9±0.1 0.9+0.2 –0.
2SB1679 Datasheet