XN1872 Datasheet (Panasonic Semiconductor) - Silicon N-channel . Enhancement MOS FET

XN1872, Silicon N-channel . Enhancement MOS FET

Composite Transistors XN1872 Silicon N-channel Enhancement MOS FET Unit: mm For switching 2.8 -0.3 0.65±0.15 +0.2 +0.25 1.5 -0.05 5 0.65±0.15 1 0.95 2.9 -0.05 q q Two elements incorporated into one package.

(Source-coupled FETs) Reduction of the mounting area and assembly cost by one half.

1.9±0.1 +0.2 4 0.95 3 2 0.3 -0.05 0.4±0.2 0.16 -0.06 +0.1 1.1 -0.1 q 2SK621 × 2 elements 0.8 s Basic Part Number of Element +0.2 s Absolute Maximum Ratings Parameter Drain to so

XN1872 Features

* 1 Composite Transistors PT

* Ta 500 120 Ta=25˚C XN1872 ID

* VDS 120 VDS=5V 100 VGS=6.0V 80 5.5V 5.0V 4.5V 40 ID

* VGS Total power dissipation PT (mW) 400 100 Drain current ID (mA) Drain current ID (mA) 80 Ta=

* 25˚C 25˚C 300 60 60 75˚C 200 4.0V 3.5V 3.0