XN1871 Datasheet (Panasonic Semiconductor) - Silicon N-channel junction FET

XN1871, Silicon N-channel junction FET

Composite Transistors XN1871 Silicon N-channel junction FET Unit: mm For amplification of the low frequency 2.8 -0.3 0.65±0.15 +0.2 +0.25 1.5 -0.05 5 0.65±0.15 1 0.95 2.9 -0.05 q q Two elements incorporated into one package.

(Soure-coupled FETs) Reduction of the mounting area and assembly cost by one half.

1.9±0.1 +0.2 4 0.95 3 2 0.3 -0.05 0.4±0.2 0.16 -0.06 +0.1 1.1 -0.1 q 2SK198 × 2 elements 0.8 s Basic Part Number of Element +0.2 s Absolute Maximum Ratings Parameter Drai

XN1871 Features

* 1 Composite Transistors PT

* Ta 500 8 Ta=25˚C 7 XN1871 ID

* VDS 9.6 VDS=10V 8.0 ID

* VGS Total power dissipation PT (mW) 400 Drain current ID (mA) VGS=0V 5 4

* 0.1V 3 2 1

* 0.2V

* 0.3V

* 0.4V Drain current ID (mA) 6 6.4 300 4.8 Ta=75˚C