LN66L - GaAs Infrared Light Emitting Diode

Name: LN66L
SKU: LN66L-60183

Panasonic Semiconductor

The LN66L by Panasonic Semiconductor is a GaAs Infrared Light Emitting Diode. Below is the official datasheet preview.

Datasheet Details

Part number	LN66L
Manufacturer	Panasonic Semiconductor
File Size	42.27 KB
Description	GaAs Infrared Light Emitting Diode
Datasheet	LN66L_PanasonicSemiconductor.pdf
Additional preview pages of the LN66L datasheet.

High-power output, high-efficiency :PO = 8 mW (typ. ) Emitted light spectrum suited for silicon photodetectors Wide directivity : θ = 25 deg. (typ. ) Transparent epoxy resin package Long lead-wire type 26.3±1.0 24.3±1.0 5.25±0.3 1.5 1.0 7.65±0.2 ø5.0±0.2 Good radiant power output linearity with respect to input current Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature.
Symbol PD IF IFP.
VR Topr.

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Published: Mar 22, 2005 |