LN66F - GaAs Infrared Light Emitting Diode

Name: LN66F
SKU: LN66F-60182

Panasonic Semiconductor

The LN66F by Panasonic Semiconductor is a GaAs Infrared Light Emitting Diode. Below is the official datasheet preview.

Datasheet Details

Part number	LN66F
Manufacturer	Panasonic Semiconductor
File Size	41.81 KB
Description	GaAs Infrared Light Emitting Diode
Datasheet	LN66F_PanasonicSemiconductor.pdf
Additional preview pages of the LN66F datasheet.

High-power output, high-efficiency : Ie = 13.0 mW/sr (min. ) Emitted light spectrum suited for silicon photodetectors Narrow directivity : θ = 15 deg. (typ. ) Transparent epoxy resin package 13.5±1.0 11.5±1.0 3.6±0.3 1.0 7.65±0.2 ø5.0±0.2 Not soldered 2-1.0±0.15 2-0.6±0.15 2.54 0.6±0.15 2 1 1: Cathode 2: Anode ø6.0±0.2 Absolute Maximum Ratings (Ta = 25˚C) Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature.

📁 LN66F Similar Datasheet

LN6011 - 3W Stereo Audio Power Amplifier (natlinear)
LN60A - Single Cell Li-Ion battery indicator chip (natlinear)
LN60N04 - 60A/40V withstand voltage N-channel enhanced FET (natlinear)
LN6101 - Super capacitor charging protection chip (natlinear)
LN6102 - Lead acid battery display (natlinear)
LN6103 - Super capacitor charging protection chip (natlinear)
LN61A - Ultra-Small Package High-Programmable Precision Voltage Detector (natlinear)
LN61C - Ultra-Small Package High-Precision Voltage Detector (natlinear)

Other Datasheets by Panasonic Semiconductor

Published: Mar 22, 2005 |