C5884 - Silicon NPN Transistor

Panasonic Semiconductor

Datasheet Details

Part number	C5884
Manufacturer	Panasonic Semiconductor
File Size	211.06 KB
Description	Silicon NPN Transistor
Datasheet	C5884-PanasonicSemiconductor.pdf

9.9±0.3 4.6±0.2 2.9±0.2 15.0±0.3 8.0±0.2 1.0±0.1.
High breakdown voltage: VCBO ≥ 1 500 V.
Wide safe operation area φ3.2±0.1.
Built-in dumper diode.
Absolute Maximum Ratings TC = 25°C / Parameter Symbol Rating Unit 13.7-+00..25 2.0±0.2 4.1±0.2 Solder Dip 0.76±0.06 1.45±0.15 1.2±0.15 0.75±0.1 1.25±0.1 2.6±0.1 0.7±0.1 e Collector-base voltage (Emitter open) VCBO 1 500 V pe) Collector-emitter voltage (E-B short) VCES 1 500 V nc d ge. ed ty Emitter.

📁 C5884 Similar Datasheet

Other Datasheets by Panasonic Semiconductor

Published: Sep 29, 2015 |