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C3795 - 2SC3795

Download the C3795 datasheet PDF. This datasheet also covers the C3795A variant, as both devices belong to the same 2sc3795 family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • 10.0±0.2 4.2±0.2.
  • High-speed switching 5.5±0.2 2.7±0.2.
  • High collector to base voltage VCBO.
  • Low collector to emitter saturation voltage VCE(sat).
  • Full-pack package which can be installed to the heat sink with one screw I Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit / Collector to base 2SC3795 VCBO 14.0±0.5 Solder Dip (4.0) 800 V voltage 2SC3795A 900 e e) Collector to 2SC3795 VCES 800 V c typ emitter voltage 2SC3795A.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (C3795A_PanasonicSemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Power Transistors 2SC3795, 2SC3795A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 4.2±0.2 16.7±0.3 7.5±0.2 0.7±0.1 I Features 10.0±0.2 4.2±0.2 • High-speed switching 5.5±0.2 2.7±0.2 • High collector to base voltage VCBO • Low collector to emitter saturation voltage VCE(sat) • Full-pack package which can be installed to the heat sink with one screw I Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit / Collector to base 2SC3795 VCBO 14.0±0.5 Solder Dip (4.0) 800 V voltage 2SC3795A 900 e e) Collector to 2SC3795 VCES 800 V c typ emitter voltage 2SC3795A 900 n d tage.