Download the 2SK65 datasheet PDF.
This datasheet also covers the 2SK0065 variant, as both devices belong to the same silicon n-channel junction fet family and are provided as variant models within a single manufacturer datasheet.
Features
- G Diode is connected between gate and source G Low noise voltage
I Absolute Maximum Ratings (Ta = 25°C)
Parameter Drain to Source voltage Gate to Drain voltage Drain to Source current Drain to Gate current Gate to Source current Allowable power dissipation Operating ambient temperature Storage temperature Symbol VDSO VGDO IDSO IDGO IGSO PD Topr Tstg Ratings 12.
- 12 2 2 2 20.
- 10 to +70.
- 20 to +150 Unit V V mA mA mA mW °C °C
1 2 3 0.45+0.20.
- 0.10 (2.5) (2.5) 0.45+0.