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2SK657 - Silicon N-Channel MOSFET

Download the 2SK657 datasheet PDF. This datasheet also covers the 2SK0657 variant, as both devices belong to the same silicon n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • 1.0±0.1 (0.85) 1.25±0.05 0.45±0.05 0.55±0.1 I Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature Symbol VDSS VGSO ID IDP PD Tch Tstg Ratings 50 8 ±100 ±200 400 150.
  • 55 to +150 Unit V V mA mA mW °C °C 1 (2.5) 2 (2.5) 3 1: Source 2: Drain 3: Gate EIAJ: SC-71 M-A1 Package Internal Connection D G S I Electrical Characteristics (Ta.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2SK0657_PanasonicSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 2SK657
Manufacturer Panasonic
File Size 77.93 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet 2SK657 Datasheet

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Other Datasheets by Panasonic

Part Number Description
2SK65 Silicon N-Channel Junction FET
2SK655 Silicon N-Channel MOSFET
2SK656 Silicon N-Channel MOSFET
2SK601 N-Channel MOSFET
2SK614 N-Channel MOSFET

Full PDF Text Transcription

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Silicon MOS FETs (Small Signal) 2SK0657 (2SK657) Silicon N-Channel MOS FET Unit: mm For switching 6.9±0.1 (0.4) 2.5±0.1 (1.0) (1.0) 3.5±0.1 2.0±0.2 2.4±0.2 (1.5) (1.5) I Features 1.0±0.1 (0.85) 1.25±0.05 0.45±0.05 0.55±0.1 I Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature Symbol VDSS VGSO ID IDP PD Tch Tstg Ratings 50 8 ±100 ±200 400 150 −55 to +150 Unit V V mA mA mW °C °C 1 (2.5) 2 (2.
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