2SK3637 Silicon N-channel power MOSFET

Panasonic Semiconductor

Description

www.DataSheet4U.com Power MOSFETs 2SK3637 Silicon N-channel power MOSFET 15.5±0.5 Unit: mm φ 3.2±0.1 5˚ 3.0±0.3 5˚ For PDP/For high-speed switchin.

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Datasheet Specifications

Part number: 2SK3637
Manufacturer: Panasonic Semiconductor
File Size: 90.11 KB
Datasheet: 2SK3637_PanasonicSemiconductor.pdf
Description: Silicon N-channel power MOSFET

Features

* (23.4) 1 2SK3637
* Electrical Characteristics (Continued) TC = 25°C ± 3°C Parameter Total gate charge Gate-source charge Gate-drain charge Channel-case heat resistance Channel-atmosphere heat resistance Symbol Qg Qgs Qgd Rth(ch-c) Rth(ch-a) VGS = 10 V Conditions VDD = 100 V, ID = 25 A Min Typ

Applications

* or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications:
* Special applications (such as for airplanes, aerospace, automobiles, traff

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2SK3637 Silicon N-channel power MOSFET Panasonic Semiconductor

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