q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown q Low-voltage drive q High electrostatic breakdown voltage q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply
7.3±0.1 1.8±0.1
unit: mm
6.5±0.1 5.3±0.1 4.35±0.1 2.3±0.1 0.5±0.1
s.
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Power F-MOS FETs
2SK3024 (Tentative)
Silicon N-Channel Power F-MOS FET
s Features
q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown q Low-voltage drive q High electrostatic breakdown voltage q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply
7.3±0.1 1.8±0.1
unit: mm
6.5±0.1 5.3±0.1 4.35±0.1 2.3±0.1 0.5±0.1
s Applications
2.5±0.1
0.8max
0.93±0.1
1.0±0.1 0.1±0.05 0.5±0.1
s Absolute Maximum Ratings (TC = 25°C)
Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP EAS* PD Tch Tstg Ratings 60 ±20 ±20 ±40 20 20 1 150 −55 to +150 Unit V V A A mJ
1 2
0.75±0.1 2.3±0.1 4.6±0.
2SK3024 Datasheet