2SK3560 - N-Channel MOSFET

Panasonic Semiconductor

Datasheet Details

Part number	2SK3560
Manufacturer	Panasonic Semiconductor
File Size	76.43 KB
Description	N-Channel MOSFET
Datasheet	2SK3560_PanasonicSemiconductor.pdf

s.
Low on-resistance, low Qg.
High avalanche resistance 10.1±0.3 (1.4) 10.5±0.3 4.6±0.2 1.4±0.1 Unit: mm 0.6±0.1 1.4±0.1 0.8±0.1 2.54±0.3 2.5±0.2 (10.2) (8.9) 1 2 3 (6.4) (1.4) (2.1) 3.0±0.5 0 to 0.5.
Absolute Maximum Ratings TC = 25°C Parameter Drain-source surrender voltage Gate-source surrender voltage Drain current Peak drain current Power dissipation Ta = 25°C Tch Tstg Symbol VDSS VGSS ID IDP PD Rating 230 ±30 30 120 50 3 150.
55 to +150 °C °C Unit V V A A.

📁 2SK3560 Similar Datasheet

Other Datasheets by Panasonic Semiconductor

Published: Mar 30, 2005 |