2SK3318 - Silicon N-channel power MOSFET

Panasonic Semiconductor

Datasheet Details

Part number	2SK3318
Manufacturer	Panasonic Semiconductor
File Size	96.60 KB
Description	Silicon N-channel power MOSFET
Datasheet	2SK3318_PanasonicSemiconductor.pdf

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Avalanche energy capability guaranteed.
High-speed switching.
Low ON resistance Ron.
No secondary breakdown 21.0±0.5 φ 3.2±0.1 (3.5) Solder Dip 15.0±0.2 2.0±0.2 1.1±0.1 2.0±0.1 0.6±0.2.
Absolute Maximum Ratings TC = 25°C Parameter Drain-source surrender voltage Gate-source surrender voltage Drain current Peak drain current Avalanche energy capability.
Power dissipation Ta = 25°C Tch Tstg Symbol VDSS VGSS ID IDP EAS PD Rating 600 ±30 ±15 ±60 11.

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Published: Nov 11, 2006 |