2SK3064 Datasheet (Panasonic Semiconductor)

2SK3064, N-Channel MOSFET

Silicon MOS FETs (Small Signal) 2SK3064 Silicon N-Channel MOS FET Secondary battery pack (Li ion battery, etc.) For switching 0.425 unit: mm 2.1±0.1 1.25±0.1 0.425 0.65 1 q High-speed switching q S-mini type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing.

q Low-voltage drive (Vth: 1 to 2V) q Low Ron 2.0±0.2 1.3±0.1 0.65 3 2 0.2 0.9±0.1 0 to 0.1 s Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source voltage Gate

2SK3064 Features

* +0.1 1 Silicon MOS FETs (Small Signal) PD  Ta 200 120 2SK3064 ID  VDS 60 | Yfs |  VGS Forward transfer admittance |Yfs| (mS) Ta=25˚C VDS=5V 50 Allowable power dissipation PD (mW) 160 100 Drain current ID (mA) VGS=6.0V 80 5.5V 5.0V 60 4.5V 4.0V 40 3.5V 20 3.0V 2.5V 40 120 30 80 20