q
3.8±0.2
90° 0.65±0.1 0.85±0.1
q q
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation (TC=25°C) Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
(TC=25˚C)
Ratings 100 80 5 1.5 1 1.5 150.
55 to +150 Unit V V V A A W ˚C ˚C
B
1 2 3 2.5±0.2 0.8C
16.0±1.0
Suitable for the driver circuit of a motor, a printer hammer and li.
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Power Transistors
2SD2220
Silicon NPN triple diffusion planar type Darlington
For low-frequency amplification
7.5±0.2
Unit: mm
4.5±0.2
10.8±0.2
s Features
q
3.8±0.2
90° 0.65±0.1 0.85±0.1
q q
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation (TC=25°C) Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
(TC=25˚C)
Ratings 100 80 5 1.5 1 1.5 150 –55 to +150 Unit V V V A A W ˚C ˚C
B
1 2 3 2.5±0.2 0.8C
16.0±1.
2SD2220 Datasheet
