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Power Transistors
2SC3982, 2SC3982A
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
20.0±0.5
Unit: mm
φ 3.3±0.2 5.0±0.3 3.0
6.0
s Features
q q q q
High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE (TC=25˚C)
Ratings 900 1000 900 1000 800 7 15 10 5 150 3.5 150 –55 to +150 Unit V
26.0±0.5
10.0
1.5
2.0
4.0
1.5
20.0±0.5 2.5
Solder Dip
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SC3982 2SC3982A 2SC3982 VCES VCEO VEBO ICP IC IB Ta=25°C PC Tj Tstg Symbol VCBO
2.0±0.3 3.0±0.3 1.0±0.2
2.7±0.3
0.6±0.2 5.45±0.3 10.9±0.