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2SC3982 - Silicon NPN Transistor

Key Features

  • q q q q High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE (TC=25˚C) Ratings 900 1000 900 1000 800 7 15 10 5 150 3.5 150.
  • 55 to +150 Unit V 26.0±0.5 10.0 1.5 2.0 4.0 1.5 20.0±0.5 2.5 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SC3982 2SC3982A 2SC3982 VCES VCEO VEBO ICP IC IB Ta=25°C PC Tj Tstg Symbol VCBO 2.0±0.3 3.0±0.3 1.0±0.2 2.7±0.

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Other Datasheets by Panasonic

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2SC3982A Silicon NPN Transistor
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Power Transistors 2SC3982, 2SC3982A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching 20.0±0.5 Unit: mm φ 3.3±0.2 5.0±0.3 3.0 6.0 s Features q q q q High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE (TC=25˚C) Ratings 900 1000 900 1000 800 7 15 10 5 150 3.5 150 –55 to +150 Unit V 26.0±0.5 10.0 1.5 2.0 4.0 1.5 20.0±0.5 2.5 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SC3982 2SC3982A 2SC3982 VCES VCEO VEBO ICP IC IB Ta=25°C PC Tj Tstg Symbol VCBO 2.0±0.3 3.0±0.3 1.0±0.2 2.7±0.3 0.6±0.2 5.45±0.3 10.9±0.