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2SA1767 - Silicon PNP epitaxial planer type Transistor

Features

  • 0.45.
  • 0.1 1.27 +0.2 0.45.
  • 0.1 1.27 +0.2 mA mW ˚C ˚C 1 2 3 2.3±0.2 mA 2.54±0.15 1:Emitter 2:Collector 3:Base JEDEC:TO.
  • 92 EIAJ:SC.
  • 43A s Electrical Characteristics Parameter Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25˚C) Symbol VCEO VEBO hFE fT Cob.
  • Conditions IC =.
  • 100µA, IB = 0 IE =.
  • 1µA, IC = 0 V.

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Datasheet Details

Part number 2SA1767
Manufacturer Panasonic
File Size 36.24 KB
Description Silicon PNP epitaxial planer type Transistor
Datasheet download datasheet 2SA1767 Datasheet

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Full PDF Text Transcription

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Transistor 2SA1767 Silicon PNP epitaxial planer type For general amplification Complementary to 2SC1473A 5.0±0.2 Unit: mm 4.0±0.2 q High collector to emitter voltage VCEO. s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25˚C) Ratings –300 –300 –5 –100 –70 750 150 –55 ~ +150 Unit V V V 13.5±0.5 5.1±0.2 s Features 0.45 –0.1 1.27 +0.2 0.45 –0.1 1.27 +0.2 mA mW ˚C ˚C 1 2 3 2.3±0.2 mA 2.54±0.
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