2SA1767 - Silicon NPN triple diffusion planer type Transistor

Panasonic

Key Features

0.45.
0.1 1.27 +0.2 0.45.
0.1 1.27 +0.2 mA mW ˚C ˚C 1 2 3 2.3±0.2 mA 2.54±0.15 1:Emitter 2:Collector 3:Base JEDEC:TO.
92 EIAJ:SC.
43A s Electrical Characteristics Parameter Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25˚C) Symbol VCEO VEBO hFE fT Cob.
Conditions IC =.
100µA, IB = 0 IE =.
1µA, IC = 0 V.

2SA1767 silicon npn triple diffusion planer type transistor by Panasonic - Datasheet Preview

Datasheet Details

Part number	2SA1767
Manufacturer	Panasonic
File Size	36.24 KB
Description	Silicon NPN triple diffusion planer type Transistor
Datasheet	2SA1767 Datasheet

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Transistor 2SA1767 Silicon PNP epitaxial planer type For general amplification Complementary to 2SC1473A 5.0±0.2 Unit: mm 4.0±0.2 q High collector to emitter voltage VCEO. s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25˚C) Ratings –300 –300 –5 –100 –70 750 150 –55 ~ +150 Unit V V V 13.5±0.5 5.1±0.2 s Features 0.45 –0.1 1.27 +0.2 0.45 –0.1 1.27 +0.2 mA mW ˚C ˚C 1 2 3 2.3±0.2 mA 2.54±0.