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PJX8805 - P-Channel Enhancement Mode MOSFET

Features

  • RDS(ON) , VGS@-4.5V, ID@-0.5A.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PPJX8805 30V P-Channel Enhancement Mode MOSFET – ESD Protected Voltage -30 V Current -0.5A SOT-563 Features  RDS(ON) , VGS@-4.5V, ID@-0.5A<390mΩ  RDS(ON) , VGS@-2.5V, ID@-0.3A<560mΩ  RDS(ON) , VGS@-1.8V, ID@-0.1A<990mΩ  Advanced Trench Process Technology  Specially Designed for Switch Load, PWM Application, etc.  ESD Protected 2KV HBM  Lead free in compliance with EU RoHS 2011/65/EU directive.  Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data  Case: SOT-563 Package  Terminals: Solderable per MIL-STD-750, Method 2026  Approx. Weight: 0.00009 ounces, 0.
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