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PJX30N65T - N-Channel MOSFETS

Description

These N-Channel enhancement mode power field effect transistors are using Super Junction technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 30A,650V, RDS(ON) =0.14Ω@VGS = 10V.
  • Improved dv/dt capability.
  • Fast switching.
  • 100% EAS Guaranteed.
  • Green Device Available App.
  • licHaigthioenffiscient switched mode power supplies.
  • LED Lighting.
  • Adapter/charger G DS G S Absolute Maximum Ratings (Tc=25℃ unless otherwise noted) Symbol VDS VGS ID IDM EAS IAS PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current.
  • Continuous (TC=25℃) Drain Current.
  • Continuous (TC=1.

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Datasheet Details

Part number PJX30N65T
Manufacturer Potens semiconductor
File Size 803.60 KB
Description N-Channel MOSFETS
Datasheet download datasheet PJX30N65T Datasheet

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Full PDF Text Transcription

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Preliminary datasheet 650V N-Channel MOSFETS PJX30N65T General Description These N-Channel enhancement mode power field effect transistors are using Super Junction technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply TO247 Pin Configuration D BVDSS 650V RDSON 0.14 ID 30A Features  30A,650V, RDS(ON) =0.
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