PJ4N3KDW - 30V Dual N-Channel MOSFET

Pan Jit International

Datasheet Details

Part number	PJ4N3KDW
Manufacturer	Pan Jit International
File Size	126.96 KB
Description	30V Dual N-Channel MOSFET
Datasheet	PJ4N3KDW_PanJitInternational.pdf

RDS(ON), VGS@2.5V,IDS@1mA=7.0Ω.
RDS(ON), VGS@4.0V,IDS@10mA=5.0Ω.
Advanced Trench Process Technology.
High Density Cell Design For Ultra Low On-Resistance.
The MOSFET elements are independent,eliminating interference.
Mounting cost and area can be cut in half.
Very Low Leakage Current In Off Condition.
Specially Designed for Battery Operated Systems,Solid-State Relays Drivers : Relays, Displays, Lamps, Solenoids, Memories, e.

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Published: Feb 26, 2011 |