PJ4800 - 30V N-Channel MOSFET

Pan Jit International

Datasheet Details

RDS(ON), VGS@10V,IDS@8A=20mΩ.
RDS(ON), VGS@5.0V,IDS@6A=31mΩ.
Advanced Trench Process Technology.
High Density Cell Design For Ultra Low On-Resistance.
Specially Designed for DC/DC Converters.
Fully Characterized Avalanche Voltage and Current.
Pb free product : 99% Sn above can meet RoHS environment substance directive request.

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Published: Feb 26, 2011 |