C3195 NPN Silicon Epitaxial Planar Transistor

Description

CSD18533KCS www.ti.com SLPS362A * SEPTEMBER 2012 * REVISED JANUARY 2013 60-V, N-Channel NexFET™ Power MOSFETs Check for Samples: CSD1.
The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.

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Datasheet Specifications

Part number: C3195
Manufacturer: PACO
File Size: 100.51 KB
Datasheet: C3195-PACO.pdf
Description: NPN Silicon Epitaxial Planar Transistor

Features

* Ultra Low Qg and Qgd Low Thermal Resistance Avalanche Rated Logic Level Pb Free Terminal Plating RoHS Compliant Halogen Free TO-220 Plastic Package PRODUCT SUMMARY TA = 25°C VDS Qg Qgd RDS(on) VGS(th) Drain to Source Voltage Gate Charge Total (10V) Gate Charge Gate to Drain Drain to Source On Resist

Applications

* DC-DC Conversion Secondary Side Synchronous Rectifier Motor Control ABSOLUTE MAXIMUM RATINGS TA = 25°C VDS VGS Drain to Source Voltage Gate to Source Voltage Continuous Drain Current (Package limited), TC = 25°C ID Continuous Drain Current (Silicon limited), TC = 25°C

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C3195 NPN Silicon Epitaxial Planar Transistor PACO

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