Description
, OSG65R900AF, OSG65R900DF, OSG65R900FF, OSG65R900PF Enhancement Mode N-Channel Power MOSFET * General .
OSG65R900xF use advanced GreenMOSTM technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics.
Applications
* VDS, min@Tjmax
* ID, pulse
* RDS(ON), max @ VGS=10 V
* Qg
700 V 15 A 900 mΩ 7.6 nC
* Schematic and Package Information
Schematic Diagram
Pin Assignment Top View
TO251
TO252
TO220F
TO220
OSG65R900AF OSG65R900DF OSG65R900FF OSG65R900PF
* Absolute Maximum Ratings at