OSG65R900AF Enhancement Mode N-Channel Power MOSFET

Description

, OSG65R900AF, OSG65R900DF, OSG65R900FF, OSG65R900PF Enhancement Mode N-Channel Power MOSFET * General .
OSG65R900xF use advanced GreenMOSTM technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics.

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Datasheet Specifications

Part number: OSG65R900AF
Manufacturer: Oriental Semiconductor
File Size: 908.50 KB
Datasheet: OSG65R900AF-OrientalSemiconductor.pdf
Description: Enhancement Mode N-Channel Power MOSFET

Applications

* VDS, min@Tjmax
* ID, pulse
* RDS(ON), max @ VGS=10 V
* Qg 700 V 15 A 900 mΩ 7.6 nC
* Schematic and Package Information Schematic Diagram Pin Assignment Top View TO251 TO252 TO220F TO220 OSG65R900AF OSG65R900DF OSG65R900FF OSG65R900PF
* Absolute Maximum Ratings at

OSG65R900AF Distributors

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OSG65R900AF Enhancement Mode N-Channel Power MOSFET Oriental Semiconductor

Oriental Semiconductor OSG65R900AF-like datasheet