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OSG55R092HF Datasheet - Oriental Semiconductor

OSG55R092HF N-Channel Power MOSFET

OSG55R092HF use advanced GreenMOSTM technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is suitable for telecom and super charger applications. * VDS, min@Tjmax * ID, pulse * RDS(ON), max @ VGS=10 V * Qg 600 V 120.

OSG55R092HF-OrientalSemiconductor.pdf

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Datasheet Details

Part number:

OSG55R092HF

Manufacturer:

Oriental Semiconductor

File Size:

716.35 KB

Description:

N-channel power mosfet.

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OSG55R092HF OSG55R092HF N-Channel Power MOSFET Oriental Semiconductor

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