Datasheet Details
| Part number | OSG55R092HF |
|---|---|
| Manufacturer | Oriental Semiconductor |
| File Size | 716.35 KB |
| Description | N-Channel Power MOSFET |
| Datasheet |
 OSG55R092HF-OrientalSemiconductor.pdf
|
| Part number | OSG55R092HF |
|---|---|
| Manufacturer | Oriental Semiconductor |
| File Size | 716.35 KB |
| Description | N-Channel Power MOSFET |
| Datasheet |
OSG55R092HF-OrientalSemiconductor.pdf
|
OSG55R092HF use advanced GreenMOSTM technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. VDS, min@Tjmax ID, pulse RDS(ON), max @ VGS=10 V Qg 600 V 120 A 92 mΩ 38.6 nC Schematic and Package Information SCHEMATIC DIAGRAM PIN ASSIGNMENT-TOP VIEW TO247 OSG55R092HF Absolute Maximum Ratings at Tj=25℃ unless otherwise noted PARAMETER Drai
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