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SBE812 Schottky Barrier Diode

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Description

Ordering number : EN8966A SBE812 Schottky Barrier Diode 60V, 1A, Low IR, Non-Monolithic Dual VEC8 Common Cathode http://onsemi.com Applications

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Features

* Small switching noise
* Low leakage current and high reliability due to highly reliable planar structure
* Ultrasmall package allows applied sets to be made small and thin Specifications Absolute Maximum Ratings at Ta=25°C (Value per element) Parameter Symbol Conditions

SBE812 Distributors

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SBE812 Schottky Barrier Diode ON Semiconductor
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