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NXH350N100H4Q2F2P1G-R - Si/SiC Hybrid Module

Download the NXH350N100H4Q2F2P1G-R datasheet PDF. This datasheet also covers the NXH350N100H4Q2F2P1G variant, as both devices belong to the same si/sic hybrid module family and are provided as variant models within a single manufacturer datasheet.

Features

  • Extremely Efficient Trench with Field Stop Technology.
  • Low Switching Loss Reduces System Power Dissipation.
  • Module Design Offers High Power Density.
  • Low Inductive Layout.
  • Low Package Height.
  • These Devices are Pb.
  • Free, Halogen Free/BFR Free and are RoHS Compliant Typical.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (NXH350N100H4Q2F2P1G-ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by onsemi

Part Number Description
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NXH350N100H4Q2F2S1G-R Si/SiC Hybrid Module
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DATA SHEET www.onsemi.com Si/SiC Hybrid Module – EliteSiC, I-Type NPC 1000 V, 350 A IGBT, 1200 V, 100 A SiC Diode, Q2 Package NXH350N100H4Q2F2P1G, NXH350N100H4Q2F2S1G, NXH350N100H4Q2F2S1G-R, NXH350N100H4Q2F2P1G-R This high−density, integrated power module combines high−performance IGBTs with rugged anti−parallel diodes.
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