NXH350N100H4Q2F2S1G-R - Si/SiC Hybrid Module

This page provides the datasheet information for the NXH350N100H4Q2F2S1G-R, a member of the NXH350N100H4Q2F2P1G Si/SiC Hybrid Module family.

Datasheet Summary

Features

Extremely Efficient Trench with Field Stop Technology.
Low Switching Loss Reduces System Power Dissipation.
Module Design Offers High Power Density.
Low Inductive Layout.
Low Package Height.
These Devices are Pb.
Free, Halogen Free/BFR Free and are RoHS Compliant Typical.

ON Semiconductor

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Datasheet Details

Part number	NXH350N100H4Q2F2S1G-R
Manufacturer	ON Semiconductor
File Size	2.73 MB
Description	Si/SiC Hybrid Module
Datasheet	NXH350N100H4Q2F2S1G-R Datasheet
Additional preview pages of the NXH350N100H4Q2F2S1G-R datasheet.

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Full PDF Text Transcription

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DATA SHEET www.onsemi.com Si/SiC Hybrid Module – EliteSiC, I-Type NPC 1000 V, 350 A IGBT, 1200 V, 100 A SiC Diode, Q2 Package NXH350N100H4Q2F2P1G, NXH350N100H4Q2F2S1G, NXH350N100H4Q2F2S1G-R, NXH350N100H4Q2F2P1G-R This high−density, integrated power module combines high−performance IGBTs with rugged anti−parallel diodes.

Published: Jun 19, 2024 |