NXH350N100H4Q2F2P1G - Si/SiC Hybrid Module

onsemi

Features

Extremely Efficient Trench with Field Stop Technology.
Low Switching Loss Reduces System Power Dissipation.
Module Design Offers High Power Density.
Low Inductive Layout.
Low Package Height.
These Devices are Pb.
Free, Halogen Free/BFR Free and are RoHS Compliant Typical.

NXH350N100H4Q2F2P1G si/sic hybrid module by onsemi - Datasheet Preview

Datasheet Details

Part number	NXH350N100H4Q2F2P1G
Manufacturer	onsemi
File Size	2.73 MB
Description	Si/SiC Hybrid Module
Datasheet	NXH350N100H4Q2F2P1G Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
NXH3670UK	Bluetooth Low Energy transceiver	NXP
NXH5104	4 Mbit Serial SPI EEPROM	NXP

Other Datasheets by onsemi

Part Number	Description
NXH350N100H4Q2F2P1G-R	Si/SiC Hybrid Module
NXH350N100H4Q2F2S1G	Si/SiC Hybrid Module
NXH350N100H4Q2F2S1G-R	Si/SiC Hybrid Module
NXH35C120L2C2S1G	TMPIM 35A CIB/CI Module
NXH35C120L2C2SG	TMPIM 35A CIB/CI Module

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

DATA SHEET www.onsemi.com Si/SiC Hybrid Module – EliteSiC, I-Type NPC 1000 V, 350 A IGBT, 1200 V, 100 A SiC Diode, Q2 Package NXH350N100H4Q2F2P1G, NXH350N100H4Q2F2S1G, NXH350N100H4Q2F2S1G-R, NXH350N100H4Q2F2P1G-R This high−density, integrated power module combines high−performance IGBTs with rugged anti−parallel diodes.