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NVVR26A120M1WSB - SiC Module

Description

The NVVR26A120M1WSB is part of the VE

family of highly integrated power modules for Hybrid (HEV) and Electric Vehicle (EV) traction inverter application.

bridge configuration.

Features

  • Ultra Low RDS(on).
  • Aluminum Nitride Isolator.
  • Ultra.
  • low Stray Inductance ~ 7.1 nH.
  • Tvj. Max = 175°C for Continuous Operation.
  • Automotive Grade SiC MOSFET Chip Technologies.
  • Sintered Die Technology for High Reliability Performance.
  • Automotive Module AQG324 Compliant.
  • PPAP Capable.

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NVVR26A120M1WSS SiC Module

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Silicon Carbide (SiC) Module – EliteSiC Power Module for Traction Inverter, Single-Side Cooling, 2.6 mohm, 1200V, Half-Bridge, Straight Power Tabs NVVR26A120M1WSB Product Description The NVVR26A120M1WSB is part of the VE−Tract B2 SiC family of highly integrated power modules for Hybrid (HEV) and Electric Vehicle (EV) traction inverter application. The module integrates 1200 V SiC MOSFET in a half−bridge configuration. To enhance reliability and thermal performance, sintering technology is applied for die attach. The module is designed to meet the AQG324 standard. Features • Ultra Low RDS(on) • Aluminum Nitride Isolator • Ultra−low Stray Inductance ~ 7.1 nH • Tvj.
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