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NVVR26A120M1WSS - SiC Module

Description

for traction inverter, a revolutionary high mobility compound semiconductor product family that offers increased performance, better efficiency, and higher power density in similar and highly compatible packaging solutions.

Features

  • Ultra Low RDS(on).
  • Aluminum Nitride Isolator.
  • Ultra.
  • low Stray Inductance ~ 7.1 nH.
  • Tvj. Max = 175°C for Continuous Operation.
  • Automotive Grade SiC MOSFET Chip Technologies.
  • Sintered Die Technology for High Reliability Performance.
  • Automotive Module AQG324 Compliant.
  • PPAP Capable.

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Datasheet preview – NVVR26A120M1WSS

Datasheet Details

Part number NVVR26A120M1WSS
Manufacturer onsemi
File Size 608.08 KB
Description SiC Module
Datasheet download datasheet NVVR26A120M1WSS Datasheet
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Full PDF Text Transcription

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Silicon Carbide (SiC) Module – EliteSiC Power Module for Traction Inverter, Single-Side Cooling, 2.6 mohm, 1200 V, Half-Bridge, 905 Power Tabs NVVR26A120M1WSS Product Description The NVVR26A120M1WSS is part of the EliteSiC power module for traction inverter, a revolutionary high mobility compound semiconductor product family that offers increased performance, better efficiency, and higher power density in similar and highly compatible packaging solutions. The module integrates 1200 V SiC MOSFET in a half−bridge configuration. To enhance reliability and thermal performance, sintering technology is applied for die attach. The module is designed to meet the AQG324 standard. Features • Ultra Low RDS(on) • Aluminum Nitride Isolator • Ultra−low Stray Inductance ~ 7.1 nH • Tvj.
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