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MOSFET - Power, Single N-Channel
100 V, 13.6 mW, 52 A
Product Preview NVTYS013N10MCL
Features
• Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
100
V
Gate−to−Source Voltage
VGS
±20
V
Continuous Drain Current RqJC (Notes 1, 2, 3)
Power Dissipation RqJC (Notes 1, 2)
TC = 25°C
ID
Steady TC = 100°C
State
TC = 25°C
PD
52
A
37
71
W
Continuous Drain Current RqJA (Notes 1, 2, 3)
Power Dissipation RqJA (Notes 1, 2)
TA = 25°C
ID
Steady
State
TA = 25°C
PD
11.9 A
3.
NVTYS013N10MCL Datasheet
