Click to expand full text
MOSFET – Power, Single P-Channel
−40 V, 13.5 mW, −53 A
Product Preview NVTYS014P04M8L
Features
• Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR−Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
−40
V
Gate−to−Source Voltage
VGS
±20
V
Continuous Drain Current RqJC (Notes 1, 2, 4)
Power Dissipation RqJC (Notes 1, 2)
TC = 25°C
ID
Steady TC = 100°C
State TC = 25°C
PD
TC = 100°C
−53
A
−39
88
W
44
Continuous Drain Current RqJA (Notes 1, 3, 4)
Power Dissipation RqJA (Notes 1, 3)
TA = 25°C
ID
−10.
NVTYS014P04M8L Datasheet
