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NVMYS1D3N04C - N-Channel Power MOSFET

Features

  • Small Footprint (5x6 mm) for Compact Design.
  • Low RDS(on) to Minimize Conduction Losses.
  • Low QG and Capacitance to Minimize Driver Losses.
  • LFPAK4 Package, Industry Standard.
  • AEC.
  • Q101 Qualified and PPAP Capable.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

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Full PDF Text Transcription

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NVMYS1D3N04C MOSFET – Power, Single N-Channel 40 V, 1.
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