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MOSFET - Power, Single N-Channel
40 V, 1.7 mW, 190 A
NVMYS1D7N04C
Features
• Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • LFPAK4 Package, Industry Standard • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
40
V
Gate−to−Source Voltage
VGS
±20
V
Continuous Drain Current RqJC (Notes 1, 3)
Steady TC = 25°C
ID
State
TC = 100°C
190
A
135
Power Dissipation RqJC (Note 1)
Continuous Drain Current RqJA (Notes 1, 2, 3)
TC = 25°C
PD
TC = 100°C
Steady TA = 25°C
ID
State
TA = 100°C
107.1 W 53.6 36.6 A 25.
NVMYS1D7N04C Datasheet
