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NVHL072N65S3 - N-Channel MOSFET

Description

SuperFET III MOSFET is onsemi’s brand new high voltage super junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on

resistance and lower gate charge performance.

Features

  • AEC.
  • Q101 Qualified.
  • Max Junction Temperature 150°C.
  • Typ. RDS(on) = 61 mΩ.
  • Ultra Low Gate Charge (Typ. QG = 82 nC).
  • Low Effective Output Capacitance (Typ. COSS(eff. ) = 724 pF).
  • 100% Avalanche Tested.
  • These Devices are Pb.
  • Free and are RoHS Compliant Typical.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET - Power, N-Channel, SUPERFET) III, Automotive, Easy-drive 650 V, 72 mW, 44 A NVHL072N65S3 Description SuperFET III MOSFET is onsemi’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss provide superior switching performance, and with− stand extreme dv/dt rate. Consequently, SuperFET III MOSFET Easy−drive series helps manage EMI issues and allows for easier design implementation. Features • AEC−Q101 Qualified • Max Junction Temperature 150°C • Typ. RDS(on) = 61 mΩ • Ultra Low Gate Charge (Typ. QG = 82 nC) • Low Effective Output Capacitance (Typ. COSS(eff.
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