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NVH4L022N120M3S - SiC MOSFET

ON Semiconductor

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Datasheet Details

Part number	NVH4L022N120M3S
Manufacturer	ON Semiconductor
File Size	442.98 KB
Description	SiC MOSFET
Datasheet	NVH4L022N120M3S-ONSemiconductor.pdf

NVH4L022N120M3S Product details

Features

Typ. RDS(on) = 22 mW @ VGS = 18 V.
Ultra Low Gate Charge (QG(tot) = 137 nC).
High Speed Switching with Low Capacitance (Coss = 146 pF).
100% Avalanche Tested.
AEC.
Q101 Qualified and PPAP Capable.
This Device is Halide Free and RoHS Compliant with exemption 7a, Pb.
Free 2LI (on second level interconnection) Typical.

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Published: Jun 19, 2024 |