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NVBG1000N170M1 - SiC MOSFET

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ON Semiconductor

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NVBG1000N170M1 SiC MOSFET by ON Semiconductor - Datasheet Preview — Datasheet preview – NVBG1000N170M1

Datasheet Details

Part number	NVBG1000N170M1
Manufacturer	ON Semiconductor
File Size	370.27 KB
Description	SiC MOSFET
Datasheet	NVBG1000N170M1 Datasheet
Additional preview pages of the NVBG1000N170M1 datasheet.

Product details

Features

Typ. RDS(on) = 960 mW @ VGS = 20 V.
Ultra Low Gate Charge (QG(tot) = 14 nC).
High Speed Switching with Low Capacitance (Coss = 11 pF).
100% Avalanche Tested.
AEC.
Q101 Qualified and PPAP Capable.
This Device is Halide Free and RoHS Compliant with exemption 7a, Pb.
Free 2LI (on second level interconnection) Typical.

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Published: Jun 19, 2024 |