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NVBG020N120SC1 - SiC MOSFET

Features

  • Typ. RDS(on) = 20 mW.
  • Ultra Low Gate Charge (typ. QG(tot) = 220 nC).
  • Low Effective Output Capacitance (typ. Coss = 258 pF).
  • 100% Avalanche Tested.
  • AEC.
  • Q101 Qualified and PPAP Capable.
  • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb.
  • Free 2LI (on second level interconnection) Typical.

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DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – 20 mohm, 1200 V, M1, D2PAK-7L NVBG020N120SC1 Features • Typ. RDS(on) = 20 mW • Ultra Low Gate Charge (typ. QG(tot) = 220 nC) • Low Effective Output Capacitance (typ.
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