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NTB5405N, NVB5405N
Power MOSFET
40 V, 116 A, Single N−Channel, D2PAK
Features
• Low RDS(on) • High Current Capability • Low Gate Charge • AEC−Q101 Qualified and PPAP Capable − NVB5405N • These Devices are Pb−Free and are RoHS Compliant
Applications
• Electronic Brake Systems • Electronic Power Steering • Bridge Circuits
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current − RqJC
Power Dissipation − RqJC
Steady State
Steady State
TC = 25°C TC = 100°C
TC = 25°C
Continuous Drain Current − RqJA (Note 1)
Power Dissipation − RqJA (Note 1)
Steady State
Steady State
TA = 25°C TA = 100°C TA = 25°C
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
VDSS VGS ID
NVB5405N Datasheet
