NTTFD9D0N06HL - N-Channel Power MOSFET

ON Semiconductor

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Datasheet Details

Part number	NTTFD9D0N06HL
Manufacturer	ON Semiconductor
File Size	436.70 KB
Description	N-Channel Power MOSFET
Datasheet	NTTFD9D0N06HL-ONSemiconductor.pdf

NTTFD9D0N06HL Product details

Description

This device includes two specialized N Channel MOSFETs in a dual package.The switch node has been internally connected to enable easy placement and routing of synchronous buck converters.The control MOSFET (Q2) and synchronous (Q1) have been designed to provide optimal power efficiency.

Features

Q1: N.
Channel.
Max rDS(on) = 9.0 mW at VGS = 10 V, ID = 10 A.
Max rDS(on) = 13 mW at VGS = 4.5, ID = 8.0 A Q2: N.
Channel.
Max rDS(on) = 9.0 mW at VGS = 10 V, ID = 10 A.
Max rDS(on) = 13 mW at VGS = 4.5, ID = 8.0 A.
Low Inductance Packaging Shortens Rise/Fall Times, Resulting in Lower Switching Losses.
RoHS Compliant Typical.

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Published: Aug 21, 2024 |