NTTFD021N08C - N-Channel MOSFET

ON Semiconductor

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Datasheet Details

Part number	NTTFD021N08C
Manufacturer	ON Semiconductor
File Size	410.86 KB
Description	N-Channel MOSFET
Datasheet	NTTFD021N08C-ONSemiconductor.pdf

NTTFD021N08C Product details

Description

This device includes two specialized N Channel MOSFETs in a dual package.The switch node has been internally connected to enable easy placement and routing of synchronous buck converters.The control MOSFET (Q2) and synchronous (Q1) have been designed to provide optimal power efficiency.

Features

Q1: N.
Channel.
Max rDS(on) = 21 mW at VGS = 10 V, ID = 7.8 A.
Max rDS(on) = 55 mW at VGS = 6 V, ID = 3.9 A Q2: N.
Channel.
Max rDS(on) = 21 mW at VGS = 10 V, ID = 7.8 A.
Max rDS(on) = 55 mW at VGS = 6 V, ID = 3.9 A.
Low Inductance Packaging Shortens Rise/Fall Times, Resulting in Lower Switching Losses.
RoHS Compliant.

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Published: May 29, 2024 |