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NTMFS4852N - Power MOSFET

Features

  • www. DataSheet4U. com 30 V, 155 A, Single N.
  • Channel, SO.
  • 8 FL.
  • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb.
  • Free Device V(BR)DSS 30 V http://onsemi. com RDS(ON) MAX 2.1 mW @ 10 V 3.1 mW @ 4.5 V ID MAX 155 A.

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Full PDF Text Transcription (Reference)

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NTMFS4852N Advance Information Power MOSFET Features www.DataSheet4U.com 30 V, 155 A, Single N−Channel, SO−8 FL • • • • • • • • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Device V(BR)DSS 30 V http://onsemi.com RDS(ON) MAX 2.1 mW @ 10 V 3.1 mW @ 4.
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