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NTMFS4854NS - Power MOSFET

Features

  • Accurate, Lossless Current Sensing.
  • Low RDS(on) to Minimize Conduction Losses.
  • Low Capacitance to Minimize Driver Losses.
  • Optimized Gate Charge to Minimize Switching Losses.
  • These Devices are Pb.
  • Free, Halogen Free/BFR Free and are RoHS Compliant.

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NTMFS4854NS Power MOSFET 25 V, 149 A, Single N−Channel, SO−8 FL Features • Accurate, Lossless Current Sensing • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • CPU Power Delivery • DC−DC Converters • Low Side Switching MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 25 V Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1) VGS ±16 V TA = 25°C ID 24.4 A TA = 85°C 17.6 Power Dissipation RqJA (Note 1) TA = 25°C PD 2.
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