NTHL080N120SC1 - N-Channel MOSFET

Product Overview

ON Semiconductor

Datasheet Details

Part number	NTHL080N120SC1
Manufacturer	ON Semiconductor
File Size	449.24 KB
Description	N-Channel MOSFET
Datasheet	NTHL080N120SC1 Datasheet
Additional preview pages of the NTHL080N120SC1 datasheet.

Product details

Description

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon.In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge.Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

Features

1200 V @ TJ = 175°C.
Max RDS(on) = 110 mW at VGS = 20 V, ID = 20 A.
High Speed Switching with Low Capacitance.
100% UIL Tested.
These Devices are Pb.
Free and are RoHS Compliant.

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Published: May 30, 2019 |